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| FX30ASJ-03 High-Speed Switching Use Pch Power MOS FET REJ03G1445-0200 (Previous: MEJ02G0266-0101) Rev.2.00 Aug 07, 2006 Features * * * * * Drive voltage : 4 V VDSS : -30 V rDS(ON) (max) : 61 m ID : -30 A Integrated Fast Recovery Diode (TYP.) : 50 ns Outline RENESAS Package code: PRSS0004ZA-A (Package name: MP-3A) 3 4 1 12 3 1. 2. 3. 4. Gate Drain Source Drain 2, 4 Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg -- Ratings -30 20 -30 -120 -30 -30 -120 35 - 55 to +150 - 55 to +150 0.32 Unit V V A A A A A W C C g Conditions VGS = 0 V VDS = 0 V L = 10 H Typical value Rev.2.00 Aug 07, 2006 page 1 of 6 FX30ASJ-03 Electrical Characteristics (Tch = 25C) Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol V(BR)DSS IGSS IDSS VGS(th) rDS(ON) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) trr Min -30 -- -- -1.3 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -1.8 48 96 -0.72 11.9 2460 410 170 20 84 123 60 -1.0 -- 50 Max -- 0.1 -0.1 -2.3 61 120 -0.92 -- -- -- -- -- -- -- -- -1.5 3.57 -- Unit V A mA V m m V S pF pF pF ns ns ns ns V C/W ns Test Conditions ID = -1 mA, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = -30 V, VGS = 0 V ID = -1 mA, VDS = -10 V ID = -15 A, VGS = -10 V ID = -5 A, VGS = - 4 V ID = -15 A, VGS = -10 V ID = -15 A, VDS = -10 V VDS = -10 V, VGS = 0 V, f = 1MHz VDD = -15 V, ID = -15 A, VGS = -10 V, RGEN = RGS = 50 IS = -15 A, VGS = 0 V Channel to case IS = -15 A, dis/dt = 50 A/s Rev.2.00 Aug 07, 2006 page 2 of 6 FX30ASJ-03 Performance Curves Power Dissipation Derating Curve 50 -2 Maximum Safe Operating Area tw Power Dissipation PD (W) -102 Drain Current ID (A) 40 -7 -5 -3 -2 10 = 10 s s 0 1m s 30 D -101 -7 -5 -3 -2 C 20 10 -100 -7 -5 Tc = 25C 0 0 50 100 150 200 -3 Single Pulse -2 -2 -3 -5-7-100 -2 -3 -5-7-101 -2 -3 -5-7-102 -2 Case Temperature Tc (C) Drain-Source Voltage VDS (V) Output Characteristics (Typical) -50 VGS = -10V Output Characteristics (Typical) -20 VGS = -10V -8V -6V -5V PD = 35W -4V -7V -8V -6V Drain Current ID (A) -30 -5V Drain Current ID (A) -40 -16 -12 -20 -4V -8 Tc = 25C Pulse Test -3V -10 Tc = 25C Pulse Test 0 -1.0 -2.0 -3.0 PD = 35W -3V -4 0 -4.0 -5.0 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Drain-Source On-State Voltage VDS(ON) (V) Drain-Source On-State Resistance rDS(ON) (m) On-State Voltage vs. Gate-Source Voltage (Typical) -5.0 On-State Resistance vs. Drain Current (Typical) 200 Tc = 25C Pulse Test -4.0 Tc = 25C Pulse Test 160 -3.0 ID = -50A 120 VGS = -4V -2.0 -30A 80 -10V -1.0 -15A 40 0 -10-1 -2 -3 -5 -7-100 -2 -3 -5-7 -101 -2 -3 -5 -7-102 0 0 -2 -4 -6 -8 -10 Gate-Source Voltage VGS (V) Drain Current ID (A) Rev.2.00 Aug 07, 2006 page 3 of 6 FX30ASJ-03 Forward Transfer Admittance vs. Drain Current (Typical) Transfer Characteristics (Typical) -50 Forward Transfer Admittance | yfs | (S) Drain Current ID (A) -40 Tc = 25C VDS = -10V Pulse Test 2 102 7 5 4 3 2 VDS = -10V Pulse Test -30 75C 125C TC = 25C -20 101 7 5 4 3 -10 0 0 -2 -4 -6 -8 -10 -100 2 -2 -3 -5 -7 -101 -2 -3 -5 -7 -102 Gate-Source Voltage VGS (V) Capacitance vs. Drain-Source Voltage (Typical) 2 Drain Current ID (A) Switching Characteristics (Typical) 103 7 5 4 3 2 td(off) Capacitance C (pF) 3 2 Ciss 103 7 5 3 2 Coss Crss Switching Time (ns) Tch = 25C 104 f = 1MHz 7 5 VGS = 0V Tch = 25C VDD = -15V VGS = -10V RGEN = RGS = 50 102 7 5 4 3 2 tf 102 7 5 3 2 -3 -5-7-100 -2 -3 -5-7 -101 -2 -3 -5-7 -102 -2 -3 tr td(on) 101 -5 -7 -100 -2 -3 -5 -7-101 -2 -3 -5 Drain-Source Voltage VDS (V) Gate-Source Voltage vs. Gate Charge (Typical) -10 -50 Drain Current ID (A) Source-Drain Diode Forward Characteristics (Typical) VGS = 0V Pulse Test -40 Gate-Source Voltage VGS (V) Tch = 25C ID = -30A -8 -6 Source Current IS (A) -30 -4 VDS = -10V -20V -25V -20 TC = 25C 75C 125C -2 -10 0 0 10 20 30 40 50 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 Gate Charge Qg (nC) Source-Drain Voltage VSD (V) Rev.2.00 Aug 07, 2006 page 4 of 6 FX30ASJ-03 On-State Resistance vs. Channel Temperature (Typical) 101 7 5 4 3 2 Drain-Source On-State Resistance rDS(ON) (25C) Gate-Source Threshold Voltage VGS(th) (V) Drain-Source On-State Resistance rDS(ON) (tC) Threshold Voltage vs. Channel Temperature (Typical) -4.0 VGS = -10V ID = -15A Pulse Test VDS = -10V ID = -1mA -3.2 -2.4 100 7 5 4 3 2 -1.6 -0.8 10-1 -50 0 50 100 150 0 -50 0 50 100 150 Channel Temperature Tch (C) Channel Temperature Tch (C) Drain-Source Breakdown Voltage V(BR)DSS (25C) Transient Thermal Impedance Zth(ch-c) (C/W) Drain-Source Breakdown Voltage V(BR)DSS (tC) Breakdown Voltage vs. Channel Temperature (Typical) 1.4 Transient Thermal Impedance Characteristics 101 7 5 D=1 3 0.5 2 0.2 7 0.1 5 3 2 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T VGS = 0V ID = -1mA 1.2 100 1.0 0.8 10-1 7 5 3 2 0.6 0.4 -50 0 50 100 150 10-2 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Channel Temperature Tch (C) Pulse Width tw (s) Switching Time Measurement Circuit Vin Vin Monitor D.U.T. RGEN RL Vout Monitor Switching Waveform 10% 90% 90% 90% RGS VDD Vout td(on) 10% tr td(off) 10% tf Rev.2.00 Aug 07, 2006 page 5 of 6 FX30ASJ-03 Package Dimensions Package Name MP-3A JEITA Package Code SC-63 RENESAS Code PRSS0004ZA-A Previous Code MASS[Typ.] 0.32g Unit: mm 1 0.2 6.6 5.3 0.2 2.3 0.5 0.2 6.1 0.2 10.4Max 0.1 0.1 1Max 2.5Min 0.76 0.2 0.76 0.5 0.2 2.3 0.2 2.3 Order Code Lead form Surface-mounted type Surface-mounted type Standard packing Taping Quantity 3000 Standard order code Type name - T +Direction (1 or 2) +3 Standard order code example FX30ASJ-03-T13 FX30ASJ-03 75 Type name Plastic Magazine (Tube) Note: Please confirm the specification about the shipping in detail. Rev.2.00 Aug 07, 2006 page 6 of 6 1 1.4 0.2 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 (c) 2006. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .6.0 |
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